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Mitsubishi CM300DY-12NF
Overview
The Mitsubishi CM300DY-12NF is a dual IGBT module capable of 300 A and 600 V. It utilizes a trench-gate structure for effective switching and reduced conduction loss. Suited for industrial settings, it houses two IGBTs and two fast-recovery diodes in a single chassis-mount unit with an insulated baseplate.
Key Features
Dual IGBT configuration
Rated current: 300 A
Collector-emitter voltage: 600 V
Equipped with fast recovery diodes
Trench-gate tech for minimal Vce(sat)
Chassis mount with insulated base
High surge current capability
Robust and compact industrial design
Technical Specifications
Model: M300DY-12NF
Collector Current (Ic): 300 A (continuous)
Collector-Emitter Voltage (Vces): 600 V
Power Dissipation: Approx. 830 W
Vce(sat): ~2.2 V typical
Gate-Emitter Voltage (Vge): ±20 V max
Input Capacitance (Cies): ~100 nF
Turn-on/off time: Fast switching speed
Configuration: Dual IGBT + dual diode
Package: Module, insulated base
Mounting: Chassis mount
Operating Temperature: –40 °C to +150 °C
Applications
AC and DC motor control
Industrial inverters
UPS and backup power systems
Renewable energy converters
Welding machines
High-speed switching power supplies
Why Choose the CM300DY-12NF
Dual IGBTs in one module simplify system design
Excellent thermal performance
Reliable Mitsubishi technology
Easy installation with chassis mount
High-efficiency switching for demanding applications
Order Now
The Mitsubishi M300DY-12NF IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Descripción
Mitsubishi CM300DY-12NF
Overview
The Mitsubishi CM300DY-12NF is a dual IGBT module capable of 300 A and 600 V. It utilizes a trench-gate structure for effective switching and reduced conduction loss. Suited for industrial settings, it houses two IGBTs and two fast-recovery diodes in a single chassis-mount unit with an insulated baseplate.
Key Features
Dual IGBT configuration
Rated current: 300 A
Collector-emitter voltage: 600 V
Equipped with fast recovery diodes
Trench-gate tech for minimal Vce(sat)
Chassis mount with insulated base
High surge current capability
Robust and compact industrial design
Technical Specifications
Model: M300DY-12NF
Collector Current (Ic): 300 A (continuous)
Collector-Emitter Voltage (Vces): 600 V
Power Dissipation: Approx. 830 W
Vce(sat): ~2.2 V typical
Gate-Emitter Voltage (Vge): ±20 V max
Input Capacitance (Cies): ~100 nF
Turn-on/off time: Fast switching speed
Configuration: Dual IGBT + dual diode
Package: Module, insulated base
Mounting: Chassis mount
Operating Temperature: –40 °C to +150 °C
Applications
AC and DC motor control
Industrial inverters
UPS and backup power systems
Renewable energy converters
Welding machines
High-speed switching power supplies
Why Choose the CM300DY-12NF
Dual IGBTs in one module simplify system design
Excellent thermal performance
Reliable Mitsubishi technology
Easy installation with chassis mount
High-efficiency switching for demanding applications
Order Now
The Mitsubishi M300DY-12NF IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
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