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Mitsubishi CM200DY-12NF
Overview
The CM200DY-12NF is a high-performance dual IGBT module from Mitsubishi, rated at 200 A and 600 V. It features a trench-gate structure for efficient switching and built-in free-wheeling diodes. Designed for use in industrial drives, UPS, and power converters, it offers excellent thermal management in a compact, chassis-mount package.
Key Features
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Dual IGBT structure with integrated diodes
-
Rated current: 200 A
-
Rated voltage: 600 V
-
Low Vce(sat) trench-gate technology
-
Insulated baseplate for easy heat sinking
-
High-speed switching and surge capability
-
Rugged industrial-grade housing
-
Mitsubishi reliability and durability
Technical Specifications
-
Model: CM200DY-12NF
-
Configuration: Dual IGBT with dual free-wheeling diodes
-
Collector Current (Ic): 200 A (continuous)
-
Collector-Emitter Voltage (Vces): 600 V
-
Power Dissipation (Approx.): 650 W
-
Vce(sat): ~2.0 V @ 200 A
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Gate-Emitter Voltage (Vge): ±20 V
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Input Capacitance (Cies): ~110 nF
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Switching Time: Fast switching performance
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Mounting: Chassis
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Operating Temp: –40 °C to +150 °C
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Package Type: Insulated module
Applications
-
Industrial inverters and drives
-
Uninterruptible power supplies (UPS)
-
Power conversion equipment
-
Renewable energy systems
-
Servo and motor control systems
Why Choose the CM200DY-12NF
-
Efficient dual IGBT configuration
-
High-speed switching with reduced loss
-
Proven Mitsubishi design
-
Simplifies thermal management
-
Compact footprint for high-power systems
Order Now
The Mitsubishi CM200DY-12NF IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation. Discover our full range of Mitsubishi IGBT Modules.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Descrição
Mitsubishi CM200DY-12NF
Overview
The CM200DY-12NF is a high-performance dual IGBT module from Mitsubishi, rated at 200 A and 600 V. It features a trench-gate structure for efficient switching and built-in free-wheeling diodes. Designed for use in industrial drives, UPS, and power converters, it offers excellent thermal management in a compact, chassis-mount package.
Key Features
-
Dual IGBT structure with integrated diodes
-
Rated current: 200 A
-
Rated voltage: 600 V
-
Low Vce(sat) trench-gate technology
-
Insulated baseplate for easy heat sinking
-
High-speed switching and surge capability
-
Rugged industrial-grade housing
-
Mitsubishi reliability and durability
Technical Specifications
-
Model: CM200DY-12NF
-
Configuration: Dual IGBT with dual free-wheeling diodes
-
Collector Current (Ic): 200 A (continuous)
-
Collector-Emitter Voltage (Vces): 600 V
-
Power Dissipation (Approx.): 650 W
-
Vce(sat): ~2.0 V @ 200 A
-
Gate-Emitter Voltage (Vge): ±20 V
-
Input Capacitance (Cies): ~110 nF
-
Switching Time: Fast switching performance
-
Mounting: Chassis
-
Operating Temp: –40 °C to +150 °C
-
Package Type: Insulated module
Applications
-
Industrial inverters and drives
-
Uninterruptible power supplies (UPS)
-
Power conversion equipment
-
Renewable energy systems
-
Servo and motor control systems
Why Choose the CM200DY-12NF
-
Efficient dual IGBT configuration
-
High-speed switching with reduced loss
-
Proven Mitsubishi design
-
Simplifies thermal management
-
Compact footprint for high-power systems
Order Now
The Mitsubishi CM200DY-12NF IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation. Discover our full range of Mitsubishi IGBT Modules.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.