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Mitsubishi CM600HU-12F
Overview
The Mitsubishi CM600HU-12F is a robust IGBT module rated for 600 A and 600 V, engineered for challenging industrial uses. Its trench gate structure, isolated baseplate, and integrated fast-recovery free-wheeling diode deliver efficient, high-speed performance in motor drives, inverters, and UPS setups.
Key Features
Collector current: 600 A continuous
Collector-emitter voltage: 600 V
Low Vce(sat) for effective switching
High-speed trench gate IGBT
Built-in free-wheeling diode
Isolated baseplate for convenience in heat sinking
Chassis mount package
High surge current capacity
Technical Specifications
Model: CM600HU-12F
IGBT Type: Trench Gate
Configuration: Single IGBT with diode
Collector Current (Ic): 600 A (continuous), 1200 A (pulsed)
Collector-Emitter Voltage (Vces): 600 V
Power Dissipation (Max): 1420 W
Vce(on): 2.2 V @ 15 V, 600 A
Input Capacitance (Cies): 160 nF @ 10 V
Gate-Emitter Voltage: ±20 V
Turn-On/Off Time: Fast switching response
Mounting: Chassis
Package Type: Module
Operating Temperature: –40 °C to +150 °C
Applications
AC motor drives
Industrial inverters
UPS systems
High-power converters
Battery-powered equipment
Renewable energy systems
Why Choose the CM600HU-12F
High power density in compact module
Reliable operation under high load
Fast, efficient switching performance
Built-in thermal and electrical isolation
Proven Mitsubishi IGBT technology
Order Now
The Mitsubishi CM600HU-12F is available in new or surplus condition and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, tailored for efficient power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Descrição
Mitsubishi CM600HU-12F
Overview
The Mitsubishi CM600HU-12F is a robust IGBT module rated for 600 A and 600 V, engineered for challenging industrial uses. Its trench gate structure, isolated baseplate, and integrated fast-recovery free-wheeling diode deliver efficient, high-speed performance in motor drives, inverters, and UPS setups.
Key Features
Collector current: 600 A continuous
Collector-emitter voltage: 600 V
Low Vce(sat) for effective switching
High-speed trench gate IGBT
Built-in free-wheeling diode
Isolated baseplate for convenience in heat sinking
Chassis mount package
High surge current capacity
Technical Specifications
Model: CM600HU-12F
IGBT Type: Trench Gate
Configuration: Single IGBT with diode
Collector Current (Ic): 600 A (continuous), 1200 A (pulsed)
Collector-Emitter Voltage (Vces): 600 V
Power Dissipation (Max): 1420 W
Vce(on): 2.2 V @ 15 V, 600 A
Input Capacitance (Cies): 160 nF @ 10 V
Gate-Emitter Voltage: ±20 V
Turn-On/Off Time: Fast switching response
Mounting: Chassis
Package Type: Module
Operating Temperature: –40 °C to +150 °C
Applications
AC motor drives
Industrial inverters
UPS systems
High-power converters
Battery-powered equipment
Renewable energy systems
Why Choose the CM600HU-12F
High power density in compact module
Reliable operation under high load
Fast, efficient switching performance
Built-in thermal and electrical isolation
Proven Mitsubishi IGBT technology
Order Now
The Mitsubishi CM600HU-12F is available in new or surplus condition and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, tailored for efficient power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.