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Fuji 2MBI200U4B‑120‑50
Overview
This IGBT module is used in industrial power electronics to control and switch high-voltage and high-current loads with efficiency and reliability.
Key Features
- Supports efficient switching in high-power circuits
- Designed for integration into industrial inverter and drive systems
- Provides reliable thermal and electrical performance
- Suitable for continuous-duty industrial environments
Technical Specifications
- Part Number: 2MBI200U4B‑120‑50
- Configuration: Dual IGBT with free-wheeling diodes
- Continuous Current: 200 A
- Collector-Emitter Voltage: 1200 V
- VCE(sat): ~2.1 V @ rated current
- Gate-Emitter Voltage: ±20 V
- Thermal Resistance (Junction–Case): ~0.18 °C/W
- Switching Speed: Fast (trench-gate optimized)
- Mounting Style: Chassis mount with insulated base
- Operating Temp Range: –40 °C to +150 °C
- Package Format: Power module
- Weight: ~300 g
Applications
- Industrial inverters and motor drives
- Power conversion and switching systems
- Energy control and distribution equipment
- Maintenance and replacement in power electronic assemblies
Why Choose the 2MBI200U4B-120-50
- Supports stable switching performance in high-power applications
- A practical choice for replacement or system integration projects
- Suitable for continuous operation in industrial power systems
- Designed for integration into Fuji Electric power semiconductor assemblies
Order Now
The Fuji 2MBI200U4B‑120‑50 IGBT module is available and ships worldwide.
Description
Fuji 2MBI200U4B‑120‑50
Overview
This IGBT module is used in industrial power electronics to control and switch high-voltage and high-current loads with efficiency and reliability.
Key Features
- Supports efficient switching in high-power circuits
- Designed for integration into industrial inverter and drive systems
- Provides reliable thermal and electrical performance
- Suitable for continuous-duty industrial environments
Technical Specifications
- Part Number: 2MBI200U4B‑120‑50
- Configuration: Dual IGBT with free-wheeling diodes
- Continuous Current: 200 A
- Collector-Emitter Voltage: 1200 V
- VCE(sat): ~2.1 V @ rated current
- Gate-Emitter Voltage: ±20 V
- Thermal Resistance (Junction–Case): ~0.18 °C/W
- Switching Speed: Fast (trench-gate optimized)
- Mounting Style: Chassis mount with insulated base
- Operating Temp Range: –40 °C to +150 °C
- Package Format: Power module
- Weight: ~300 g
Applications
- Industrial inverters and motor drives
- Power conversion and switching systems
- Energy control and distribution equipment
- Maintenance and replacement in power electronic assemblies
Why Choose the 2MBI200U4B-120-50
- Supports stable switching performance in high-power applications
- A practical choice for replacement or system integration projects
- Suitable for continuous operation in industrial power systems
- Designed for integration into Fuji Electric power semiconductor assemblies
Order Now
The Fuji 2MBI200U4B‑120‑50 IGBT module is available and ships worldwide.