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Fuji 2MBI600VN-120-50
Overview
This IGBT module is used in industrial power electronics to control and switch high-voltage and high-current loads with efficiency and reliability.
Key Features
- Supports efficient switching in high-power circuits
- Designed for integration into industrial inverter and drive systems
- Provides reliable thermal and electrical performance
- Suitable for continuous-duty industrial environments
Technical Specifications
- Part Number: 2MBI600VN-120-50
- Manufacturer: Fuji Electric
- Configuration: Dual IGBT with diodes
- Collector Current: 600 A
- Collector-Emitter Voltage: 1200 V
- VCE(sat): ~2.2 V @ rated current
- Gate-Emitter Voltage: ±20 V
- Switching Frequency: ~5 kHz
- Thermal Resistance (Junction-Case): ~0.045 °C/W
- Mounting Type: Chassis mount (isolated base)
- Operating Temperature: –40 °C to +150 °C
- Package Type: Industrial IGBT module
- Weight: Approx. 1.2–1.5 kg
Applications
- Industrial inverters and motor drives
- Power conversion and switching systems
- Energy control and distribution equipment
- Maintenance and replacement in power electronic assemblies
Why Choose the 2MBI600VN-120-50
- Designed for integration into Fuji Electric power semiconductor assemblies
- A practical choice for replacement or system integration projects
- Supports stable switching performance in high-power applications
- Suitable for continuous operation in industrial power systems
Order Now
The Fuji 2MBI600VN-120-50 IGBT module is available and ships worldwide.
Description
Fuji 2MBI600VN-120-50
Overview
This IGBT module is used in industrial power electronics to control and switch high-voltage and high-current loads with efficiency and reliability.
Key Features
- Supports efficient switching in high-power circuits
- Designed for integration into industrial inverter and drive systems
- Provides reliable thermal and electrical performance
- Suitable for continuous-duty industrial environments
Technical Specifications
- Part Number: 2MBI600VN-120-50
- Manufacturer: Fuji Electric
- Configuration: Dual IGBT with diodes
- Collector Current: 600 A
- Collector-Emitter Voltage: 1200 V
- VCE(sat): ~2.2 V @ rated current
- Gate-Emitter Voltage: ±20 V
- Switching Frequency: ~5 kHz
- Thermal Resistance (Junction-Case): ~0.045 °C/W
- Mounting Type: Chassis mount (isolated base)
- Operating Temperature: –40 °C to +150 °C
- Package Type: Industrial IGBT module
- Weight: Approx. 1.2–1.5 kg
Applications
- Industrial inverters and motor drives
- Power conversion and switching systems
- Energy control and distribution equipment
- Maintenance and replacement in power electronic assemblies
Why Choose the 2MBI600VN-120-50
- Designed for integration into Fuji Electric power semiconductor assemblies
- A practical choice for replacement or system integration projects
- Supports stable switching performance in high-power applications
- Suitable for continuous operation in industrial power systems
Order Now
The Fuji 2MBI600VN-120-50 IGBT module is available and ships worldwide.