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Mitsubishi CM1200DW-24T
Overview
The Mitsubishi CM1200DW-24T is a high-performance dual IGBT module crafted for high-power applications. With a 1200 A current rating and a 1200 V blocking voltage, it features trench-gate IGBT technology, low VCE(sat), and integrated fast-recovery diodes. Its isolated base and durable construction make it perfect for demanding industrial and energy systems.
Key Features
-
Dual IGBT half-bridge setup
-
1200 A collector current
-
1200 V collector-emitter voltage
-
Trench-gate IGBT design for enhanced efficiency
-
Integrated fast-recovery diodes
-
Isolated baseplate for better thermal transfer
-
Robust chassis mount module
-
Mitsubishi’s proven industrial-grade performance
Technical Specifications
-
Part Number: CM1200DW-24T
-
Configuration: Dual IGBT with diodes
-
Collector Current: 1200 A (continuous)
-
Collector-Emitter Voltage: 1200 V
-
VCE(sat): ~2.0–2.2 V at rated current
-
Gate-Emitter Voltage: ±20 V
-
Thermal Resistance (Junction-Case): ~0.015 °C/W
-
Switching Speed: Fast
-
Mounting Type: Chassis mount (isolated base)
-
Operating Temperature: –40 °C to +150 °C
-
Package Type: High-power industrial module
-
Weight: Approx. 1.5–2.0 kg
Applications
-
Large industrial motor drives
-
Traction and railway systems
-
Power inverters for renewable energy
-
Heavy-duty UPS and power supply systems
-
High-capacity automation and control equipment
Why Choose the CM1200DW-24T
-
Handles extremely high current with 1200 V safety margin
-
Efficient, tough, and designed for continuous industrial use
-
Mitsubishi's trench-gate IGBT technology
-
Isolated baseplate ensures superior thermal performance
-
Trusted in critical power systems worldwide
Order Now
The Mitsubishi CM1200DW-24T IGBT module is available and ships globally.
This product is part of our Mitsubishi IGBT Modules collection, engineered for high-efficiency power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Description
Mitsubishi CM1200DW-24T
Overview
The Mitsubishi CM1200DW-24T is a high-performance dual IGBT module crafted for high-power applications. With a 1200 A current rating and a 1200 V blocking voltage, it features trench-gate IGBT technology, low VCE(sat), and integrated fast-recovery diodes. Its isolated base and durable construction make it perfect for demanding industrial and energy systems.
Key Features
-
Dual IGBT half-bridge setup
-
1200 A collector current
-
1200 V collector-emitter voltage
-
Trench-gate IGBT design for enhanced efficiency
-
Integrated fast-recovery diodes
-
Isolated baseplate for better thermal transfer
-
Robust chassis mount module
-
Mitsubishi’s proven industrial-grade performance
Technical Specifications
-
Part Number: CM1200DW-24T
-
Configuration: Dual IGBT with diodes
-
Collector Current: 1200 A (continuous)
-
Collector-Emitter Voltage: 1200 V
-
VCE(sat): ~2.0–2.2 V at rated current
-
Gate-Emitter Voltage: ±20 V
-
Thermal Resistance (Junction-Case): ~0.015 °C/W
-
Switching Speed: Fast
-
Mounting Type: Chassis mount (isolated base)
-
Operating Temperature: –40 °C to +150 °C
-
Package Type: High-power industrial module
-
Weight: Approx. 1.5–2.0 kg
Applications
-
Large industrial motor drives
-
Traction and railway systems
-
Power inverters for renewable energy
-
Heavy-duty UPS and power supply systems
-
High-capacity automation and control equipment
Why Choose the CM1200DW-24T
-
Handles extremely high current with 1200 V safety margin
-
Efficient, tough, and designed for continuous industrial use
-
Mitsubishi's trench-gate IGBT technology
-
Isolated baseplate ensures superior thermal performance
-
Trusted in critical power systems worldwide
Order Now
The Mitsubishi CM1200DW-24T IGBT module is available and ships globally.
This product is part of our Mitsubishi IGBT Modules collection, engineered for high-efficiency power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.