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Mitsubishi CM150DY-13T
Overview
The Mitsubishi CM150DY-13T is a dual IGBT module crafted for medium-power switching tasks. Rated at 150 A and 600 V, it incorporates Mitsubishi's trench-gate IGBT innovation and integrated free-wheeling diodes for rapid switching and minimized power loss. Its insulated baseplate and durable package ensure secure and efficient performance in industrial environments.
Key Features
-
Dual IGBT half-bridge structure
-
Rated current: 150 A
-
Collector-emitter voltage: 600 V
-
Trench-gate IGBT design
-
Integrated fast-recovery diodes
-
Insulated baseplate for better thermal management
-
Durable chassis-mount configuration
-
Optimized for inverter and drive uses
Technical Specifications
-
Part Number: CM150DY-13T
-
Configuration: Dual IGBT with free-wheeling diodes
-
Collector Current: 150 A
-
Collector-Emitter Voltage: 600 V
-
VCE(sat): ~2.0 V @ 150 A
-
Gate-Emitter Voltage: ±20 V
-
Thermal Resistance (Junction-Case): ~0.16 °C/W
-
Switching Speed: Fast
-
Mounting Type: Chassis mount (isolated base)
-
Operating Temperature: –40 °C to +150 °C
-
Package Type: Power module
-
Weight: Approx. 250–300 g
Applications
-
AC motor drives
-
Industrial power inverters
-
Welding and automation systems
-
UPS and backup power supplies
-
Renewable energy converters
Why Choose the CM150DY-13T
-
Efficient switching with minimal losses
-
Mitsubishi quality and enduring reliability
-
Perfect for compact inverter setups
-
Simple installation with insulated base
-
Designed for strong industrial performance
Order Now
The Mitsubishi CM150DY-13T IGBT module is available for worldwide shipping.
This product is part of our Mitsubishi IGBT Modules selection, made for high-efficiency power conversion and dependable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Description
Mitsubishi CM150DY-13T
Overview
The Mitsubishi CM150DY-13T is a dual IGBT module crafted for medium-power switching tasks. Rated at 150 A and 600 V, it incorporates Mitsubishi's trench-gate IGBT innovation and integrated free-wheeling diodes for rapid switching and minimized power loss. Its insulated baseplate and durable package ensure secure and efficient performance in industrial environments.
Key Features
-
Dual IGBT half-bridge structure
-
Rated current: 150 A
-
Collector-emitter voltage: 600 V
-
Trench-gate IGBT design
-
Integrated fast-recovery diodes
-
Insulated baseplate for better thermal management
-
Durable chassis-mount configuration
-
Optimized for inverter and drive uses
Technical Specifications
-
Part Number: CM150DY-13T
-
Configuration: Dual IGBT with free-wheeling diodes
-
Collector Current: 150 A
-
Collector-Emitter Voltage: 600 V
-
VCE(sat): ~2.0 V @ 150 A
-
Gate-Emitter Voltage: ±20 V
-
Thermal Resistance (Junction-Case): ~0.16 °C/W
-
Switching Speed: Fast
-
Mounting Type: Chassis mount (isolated base)
-
Operating Temperature: –40 °C to +150 °C
-
Package Type: Power module
-
Weight: Approx. 250–300 g
Applications
-
AC motor drives
-
Industrial power inverters
-
Welding and automation systems
-
UPS and backup power supplies
-
Renewable energy converters
Why Choose the CM150DY-13T
-
Efficient switching with minimal losses
-
Mitsubishi quality and enduring reliability
-
Perfect for compact inverter setups
-
Simple installation with insulated base
-
Designed for strong industrial performance
Order Now
The Mitsubishi CM150DY-13T IGBT module is available for worldwide shipping.
This product is part of our Mitsubishi IGBT Modules selection, made for high-efficiency power conversion and dependable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.