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Mitsubishi CM150DY-24NF
Overview
The Mitsubishi CM150DY-24NF is a dual IGBT module with 150 A and 1200 V ratings, perfect for medium-to-high power switches. It has a trench-gate IGBT layout with integrated fast-recovery diodes, offering superior switching performance, minimal conduction loss, and high thermal durability. Its insulated baseplate and sturdy build are ideal for challenging industrial environments.
Key Features
Dual IGBT half-bridge configuration
Collector current: 150 A
Collector-emitter voltage: 1200 V
Trench-gate IGBT design
Integrated fast-recovery diodes
Isolated baseplate for optimal thermal control
Compact industrial module for chassis mount
RoHS compliant structure
Technical Specifications
Part Number: CM150DY-24NF
Configuration: Dual IGBT with diodes
Collector Current: 150 A
Collector-Emitter Voltage: 1200 V
VCE(sat): ~2.1–2.3 V @ rated current
Gate-Emitter Voltage: ±20 V
Thermal Resistance (Junction-Case): ~0.16 °C/W
Switching Speed: Fast
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package Type: Industrial-grade power module
Weight: Approx. 250–300 g
Applications
High-performance inverters and converters
Motor control systems and drives
Renewable energy equipment
Industrial automation and process control
Power supplies and UPS systems
Why Choose the CM150DY-24NF
Reliable Mitsubishi performance at 1200 V
Fast and efficient power switching
Enhanced thermal management with isolated base
Suitable for both OEM and retrofit applications
Rugged and compact design for industrial use
Order Now
The Mitsubishi CM150DY-24NF IGBT module is available and ships globally.
This product is part of our Mitsubishi IGBT Modules collection, designed for efficient power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Description
Mitsubishi CM150DY-24NF
Overview
The Mitsubishi CM150DY-24NF is a dual IGBT module with 150 A and 1200 V ratings, perfect for medium-to-high power switches. It has a trench-gate IGBT layout with integrated fast-recovery diodes, offering superior switching performance, minimal conduction loss, and high thermal durability. Its insulated baseplate and sturdy build are ideal for challenging industrial environments.
Key Features
Dual IGBT half-bridge configuration
Collector current: 150 A
Collector-emitter voltage: 1200 V
Trench-gate IGBT design
Integrated fast-recovery diodes
Isolated baseplate for optimal thermal control
Compact industrial module for chassis mount
RoHS compliant structure
Technical Specifications
Part Number: CM150DY-24NF
Configuration: Dual IGBT with diodes
Collector Current: 150 A
Collector-Emitter Voltage: 1200 V
VCE(sat): ~2.1–2.3 V @ rated current
Gate-Emitter Voltage: ±20 V
Thermal Resistance (Junction-Case): ~0.16 °C/W
Switching Speed: Fast
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package Type: Industrial-grade power module
Weight: Approx. 250–300 g
Applications
High-performance inverters and converters
Motor control systems and drives
Renewable energy equipment
Industrial automation and process control
Power supplies and UPS systems
Why Choose the CM150DY-24NF
Reliable Mitsubishi performance at 1200 V
Fast and efficient power switching
Enhanced thermal management with isolated base
Suitable for both OEM and retrofit applications
Rugged and compact design for industrial use
Order Now
The Mitsubishi CM150DY-24NF IGBT module is available and ships globally.
This product is part of our Mitsubishi IGBT Modules collection, designed for efficient power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.