10+ Available in Stock
-
Free Shipping on All Orders -
We will beat any price
1 Year Warranty -
Free shipping
Experts Aavaiable 7/24/365 -
30 days money-back
Mitsubishi CM200DY-24NF
Overview
The Mitsubishi CM200DY-24NF is a top-quality IGBT power module with a dual transistor setup. Rated at 200 A and 1200 V, it offers low conduction losses and fast switching. Constructed with an insulated baseplate and robust housing, it is perfect for industrial motor drives, UPS, and power control systems.
Key Features
Dual IGBT configuration
Rated current: 200 A
Collector-emitter voltage: 1200 V
Trench-gate structure for low VCE(sat)
Built-in fast-recovery free-wheeling diodes
Insulated base for efficient thermal transfer
Compact and robust chassis mount design
Ideal for inverter and power conversion systems
Technical Specifications
Part Number: CM200DY-24NF
Configuration: Dual IGBT with free-wheeling diodes
Collector Current: 200 A (continuous)
Collector-Emitter Voltage: 1200 V
VCE(sat): Approx. 2.1–2.2 V at rated current
Gate-Emitter Voltage: ±20 V
Thermal Resistance (Junction-Case): ~0.18 °C/W
Switching Characteristics: Fast rise and fall times
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package: Power module
Weight: Approx. 300 g
Applications
Industrial motor drives and servo systems
Uninterruptible power supplies (UPS)
Renewable energy inverters
High-power converters
Electric welding and automation equipment
Why Choose the CM200DY-24NF
Combines high current handling with 1200 V voltage capability
Trench-gate IGBT design improves switching efficiency
Robust and compact chassis mount structure
Ideal for medium to high-power industrial applications
Backed by Mitsubishi’s industrial reliability
Order Now
The Mitsubishi CM200DY-24NF IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Description
Mitsubishi CM200DY-24NF
Overview
The Mitsubishi CM200DY-24NF is a top-quality IGBT power module with a dual transistor setup. Rated at 200 A and 1200 V, it offers low conduction losses and fast switching. Constructed with an insulated baseplate and robust housing, it is perfect for industrial motor drives, UPS, and power control systems.
Key Features
Dual IGBT configuration
Rated current: 200 A
Collector-emitter voltage: 1200 V
Trench-gate structure for low VCE(sat)
Built-in fast-recovery free-wheeling diodes
Insulated base for efficient thermal transfer
Compact and robust chassis mount design
Ideal for inverter and power conversion systems
Technical Specifications
Part Number: CM200DY-24NF
Configuration: Dual IGBT with free-wheeling diodes
Collector Current: 200 A (continuous)
Collector-Emitter Voltage: 1200 V
VCE(sat): Approx. 2.1–2.2 V at rated current
Gate-Emitter Voltage: ±20 V
Thermal Resistance (Junction-Case): ~0.18 °C/W
Switching Characteristics: Fast rise and fall times
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package: Power module
Weight: Approx. 300 g
Applications
Industrial motor drives and servo systems
Uninterruptible power supplies (UPS)
Renewable energy inverters
High-power converters
Electric welding and automation equipment
Why Choose the CM200DY-24NF
Combines high current handling with 1200 V voltage capability
Trench-gate IGBT design improves switching efficiency
Robust and compact chassis mount structure
Ideal for medium to high-power industrial applications
Backed by Mitsubishi’s industrial reliability
Order Now
The Mitsubishi CM200DY-24NF IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.