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Mitsubishi CM200DY-24T
Overview
The Mitsubishi CM200DY-24T is a 200 A, 1200 V dual IGBT module designed for efficient power switching in industrial uses. Featuring a trench-gate and built-in diodes, it offers dependable performance with minimal conduction loss and rapid switching in a compact, insulated package.
Key Features
Dual IGBT half-bridge format
Continuous collector current: 200 A
Collector-emitter voltage: 1200 V
Trench-gate for enhanced efficiency
Integrated fast-recovery diodes
Insulated base for superior thermal management
Sturdy chassis-mount design
Suited for high-power inverter applications
Technical Specifications
Part Number: CM200DY-24T
Configuration: Dual IGBT module
Collector Current: 200 A
Collector-Emitter Voltage: 1200 V
VCE(sat): Approx. 2.1–2.2 V at 200 A
Gate-Emitter Voltage: ±20 V
Switching Speed: Fast
Thermal Resistance (Junction-Case): ~0.18 °C/W
Mounting Type: Chassis mount (isolated baseplate)
Operating Temperature: –40 °C to +150 °C
Package: Power module
Weight: Approx. 300 g
Applications
Motor drives and industrial automation
Power inverters and converters
UPS and backup power systems
Renewable energy installations
High-voltage switching gear
Why Choose the CM200DY-24T
Optimal blend of high current and voltage capacity
Efficient trench-gate rapid switching
Mitsubishi’s long-lasting industrial quality
Effective thermal design with insulated mounting
Popular in power electronics systems
Order Now
The Mitsubishi CM200DY-24T IGBT module is in stock and available for worldwide shipping.
This product is a part of our Mitsubishi IGBT Modules selection, crafted for high-efficiency power conversion and dependable performance in industrial settings.
Explore our Power Electronics Components main category to find diodes, thyristors, GTOs, MOSFETs, and more semiconductor solutions.
Description
Mitsubishi CM200DY-24T
Overview
The Mitsubishi CM200DY-24T is a 200 A, 1200 V dual IGBT module designed for efficient power switching in industrial uses. Featuring a trench-gate and built-in diodes, it offers dependable performance with minimal conduction loss and rapid switching in a compact, insulated package.
Key Features
Dual IGBT half-bridge format
Continuous collector current: 200 A
Collector-emitter voltage: 1200 V
Trench-gate for enhanced efficiency
Integrated fast-recovery diodes
Insulated base for superior thermal management
Sturdy chassis-mount design
Suited for high-power inverter applications
Technical Specifications
Part Number: CM200DY-24T
Configuration: Dual IGBT module
Collector Current: 200 A
Collector-Emitter Voltage: 1200 V
VCE(sat): Approx. 2.1–2.2 V at 200 A
Gate-Emitter Voltage: ±20 V
Switching Speed: Fast
Thermal Resistance (Junction-Case): ~0.18 °C/W
Mounting Type: Chassis mount (isolated baseplate)
Operating Temperature: –40 °C to +150 °C
Package: Power module
Weight: Approx. 300 g
Applications
Motor drives and industrial automation
Power inverters and converters
UPS and backup power systems
Renewable energy installations
High-voltage switching gear
Why Choose the CM200DY-24T
Optimal blend of high current and voltage capacity
Efficient trench-gate rapid switching
Mitsubishi’s long-lasting industrial quality
Effective thermal design with insulated mounting
Popular in power electronics systems
Order Now
The Mitsubishi CM200DY-24T IGBT module is in stock and available for worldwide shipping.
This product is a part of our Mitsubishi IGBT Modules selection, crafted for high-efficiency power conversion and dependable performance in industrial settings.
Explore our Power Electronics Components main category to find diodes, thyristors, GTOs, MOSFETs, and more semiconductor solutions.