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Mitsubishi FG2000JV-90DA
Overview
The Mitsubishi FG2000JV-90DA is a high-performance Gate Turn-Off Thyristor (GTO) featuring a 4500 V rating and 2000 A controllable current. Designed for high-frequency switching in industrial power electronics, this press pack GTO is perfect for demanding uses such as inverters, DC choppers, and induction heating systems. Its durable construction, rapid switching performance, and efficient gate control make it a dependable choice for high-energy settings.
Key Features
Repetitive Peak Voltage: 4500 V
Controllable On-State Current: 2000 A
Anode-Short configuration
Fast switching with low losses
Gate Turn-Off design for self-commutated power stages
Press pack package for high thermal stability
Compatible with inverters, converters, and high-frequency power supplies
Technical Specifications
Model: FG2000JV-90DA
Type: Gate Turn-Off Thyristor (GTO)
VDRM/VRRM: 4500 V
IT(AV): 600 A
IRMS: 940 A
ITQRM: 2000 A
ITSM: 13,000 A
Turn-On Time (tgt): 30 µs
Gate Trigger Voltage (VGT): 2.5 V
Gate Trigger Current (IGT): 2.5 A
Peak Gate Turn-Off Current (IGQM): 1000 A
Thermal Resistance: 0.017 °C/W
Mounting Force: 18–24 kN
Package Type: Press Pack
Weight: 760 g
Operating Temp: –40°C to +125°C
Applications
High-power inverters
D.C. choppers
Induction heaters
DC/DC converters
Electric traction systems
Why Choose the FG2000JV-90DA
Designed for critical power switching at high current and voltage
Suitable for self-commutated systems with gate turn-off control
High durability in thermal and electrical cycling
Proven Mitsubishi GTO technology
Order Now
The Mitsubishi FG2000JV-90DA GTO thyristor is available and ships worldwide.
Description
Mitsubishi FG2000JV-90DA
Overview
The Mitsubishi FG2000JV-90DA is a high-performance Gate Turn-Off Thyristor (GTO) featuring a 4500 V rating and 2000 A controllable current. Designed for high-frequency switching in industrial power electronics, this press pack GTO is perfect for demanding uses such as inverters, DC choppers, and induction heating systems. Its durable construction, rapid switching performance, and efficient gate control make it a dependable choice for high-energy settings.
Key Features
Repetitive Peak Voltage: 4500 V
Controllable On-State Current: 2000 A
Anode-Short configuration
Fast switching with low losses
Gate Turn-Off design for self-commutated power stages
Press pack package for high thermal stability
Compatible with inverters, converters, and high-frequency power supplies
Technical Specifications
Model: FG2000JV-90DA
Type: Gate Turn-Off Thyristor (GTO)
VDRM/VRRM: 4500 V
IT(AV): 600 A
IRMS: 940 A
ITQRM: 2000 A
ITSM: 13,000 A
Turn-On Time (tgt): 30 µs
Gate Trigger Voltage (VGT): 2.5 V
Gate Trigger Current (IGT): 2.5 A
Peak Gate Turn-Off Current (IGQM): 1000 A
Thermal Resistance: 0.017 °C/W
Mounting Force: 18–24 kN
Package Type: Press Pack
Weight: 760 g
Operating Temp: –40°C to +125°C
Applications
High-power inverters
D.C. choppers
Induction heaters
DC/DC converters
Electric traction systems
Why Choose the FG2000JV-90DA
Designed for critical power switching at high current and voltage
Suitable for self-commutated systems with gate turn-off control
High durability in thermal and electrical cycling
Proven Mitsubishi GTO technology
Order Now
The Mitsubishi FG2000JV-90DA GTO thyristor is available and ships worldwide.