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Mitsubishi CM150DY‑12H
Overview
The Mitsubishi CM150DY‑12H is a dual IGBT module rated for 150 A and 600 V, designed for medium-power switching applications. It features trench-gate IGBT technology and built-in fast-recovery diodes, providing efficient operation, dependable thermal performance, and easy integration into industrial inverters and motor control systems.
Key Features
-
Dual IGBT configuration in half-bridge topology
-
Rated for 150 A at 600 V
-
Trench-gate IGBT technology for efficient switching
-
Integrated free-wheeling diodes
-
Low VCE(sat) for minimized conduction losses
-
Insulated baseplate for simplified heat dissipation
-
Fast switching performance suitable for inverter-grade response
-
Durable industrial-grade construction
Technical Specifications
-
Part Number: CM150DY‑12H
-
Configuration: Dual IGBT with diodes
-
Collector Current: 150 A continuous
-
Collector-Emitter Voltage: 600 V
-
VCE(sat): Approx. 2.2 V @ 150 A
-
Gate-Emitter Voltage: ±20 V
-
Switching Speed: Fast turn-on and turn-off
-
Mounting: Chassis (bolt-on) with insulated base
-
Thermal Resistance (Junction-Case): Approx. 0.25 °C/W
-
Operating Temperature: –40 °C to +150 °C
-
Package Type: Module
-
Weight: Approx. 250 g
Applications
-
AC motor drives
-
Power inverters
-
Uninterruptible power supplies (UPS)
-
Renewable energy systems
-
Industrial automation equipment
Why Choose the CM150DY‑12H
-
Reliable 600 V operation in a compact dual-IGBT module
-
High current capacity with minimal conduction loss
-
Fast switching for optimal power conversion
-
Designed for secure mounting and effective heat management
-
Mitsubishi quality ensures long-term performance
Order Now
The Mitsubishi CM150DY‑12H IGBT module is available with global shipping.
This product belongs to our Mitsubishi IGBT Modules collection, created for high-efficiency power conversion and reliable performance in industrial automation.
Description
Mitsubishi CM150DY‑12H
Overview
The Mitsubishi CM150DY‑12H is a dual IGBT module rated for 150 A and 600 V, designed for medium-power switching applications. It features trench-gate IGBT technology and built-in fast-recovery diodes, providing efficient operation, dependable thermal performance, and easy integration into industrial inverters and motor control systems.
Key Features
-
Dual IGBT configuration in half-bridge topology
-
Rated for 150 A at 600 V
-
Trench-gate IGBT technology for efficient switching
-
Integrated free-wheeling diodes
-
Low VCE(sat) for minimized conduction losses
-
Insulated baseplate for simplified heat dissipation
-
Fast switching performance suitable for inverter-grade response
-
Durable industrial-grade construction
Technical Specifications
-
Part Number: CM150DY‑12H
-
Configuration: Dual IGBT with diodes
-
Collector Current: 150 A continuous
-
Collector-Emitter Voltage: 600 V
-
VCE(sat): Approx. 2.2 V @ 150 A
-
Gate-Emitter Voltage: ±20 V
-
Switching Speed: Fast turn-on and turn-off
-
Mounting: Chassis (bolt-on) with insulated base
-
Thermal Resistance (Junction-Case): Approx. 0.25 °C/W
-
Operating Temperature: –40 °C to +150 °C
-
Package Type: Module
-
Weight: Approx. 250 g
Applications
-
AC motor drives
-
Power inverters
-
Uninterruptible power supplies (UPS)
-
Renewable energy systems
-
Industrial automation equipment
Why Choose the CM150DY‑12H
-
Reliable 600 V operation in a compact dual-IGBT module
-
High current capacity with minimal conduction loss
-
Fast switching for optimal power conversion
-
Designed for secure mounting and effective heat management
-
Mitsubishi quality ensures long-term performance
Order Now
The Mitsubishi CM150DY‑12H IGBT module is available with global shipping.
This product belongs to our Mitsubishi IGBT Modules collection, created for high-efficiency power conversion and reliable performance in industrial automation.