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Mitsubishi CM150DY-24T
Overview
The Mitsubishi CM150DY-24T is a dual IGBT module for efficient power switching applications. With a 150 A current rating and 1200 V blocking voltage, it features trench-gate IGBT technology and integrated fast-recovery diodes for low conduction losses, reliable performance, and thermal efficiency in industrial systems.
Key Features
Dual IGBT half-bridge setup
Rated current: 150 A
Collector-emitter voltage: 1200 V
Trench-gate IGBT design
Integrated fast-recovery diodes
Insulated baseplate for effective heat transfer
Chassis mount design
Ideal for compact industrial power systems
Technical Specifications
Part Number: CM150DY-24T
Configuration: Dual IGBT with free-wheeling diodes
Collector Current: 150 A
Collector-Emitter Voltage: 1200 V
VCE(sat): ~2.0–2.2 V at rated current
Gate-Emitter Voltage: ±20 V
Switching Speed: Fast
Thermal Resistance (Junction-Case): ~0.16 °C/W
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package Type: Power module
Weight: Approx. 250–300 g
Applications
Inverters and motor drives
Power converters and supplies
Renewable energy systems
Industrial automation and robotics
Backup and UPS systems
Why Choose the CM150DY-24T
Compact design with solid power output
Mitsubishi trench-gate reliability
Optimized thermal performance
Fast and efficient switching
Easy installation and robust mechanical design
Order Now
The Mitsubishi CM150DY-24T IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for efficient power conversion and reliable performance in industrial automation. Browse the complete range of Mitsubishi IGBT Modules.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Description
Mitsubishi CM150DY-24T
Overview
The Mitsubishi CM150DY-24T is a dual IGBT module for efficient power switching applications. With a 150 A current rating and 1200 V blocking voltage, it features trench-gate IGBT technology and integrated fast-recovery diodes for low conduction losses, reliable performance, and thermal efficiency in industrial systems.
Key Features
Dual IGBT half-bridge setup
Rated current: 150 A
Collector-emitter voltage: 1200 V
Trench-gate IGBT design
Integrated fast-recovery diodes
Insulated baseplate for effective heat transfer
Chassis mount design
Ideal for compact industrial power systems
Technical Specifications
Part Number: CM150DY-24T
Configuration: Dual IGBT with free-wheeling diodes
Collector Current: 150 A
Collector-Emitter Voltage: 1200 V
VCE(sat): ~2.0–2.2 V at rated current
Gate-Emitter Voltage: ±20 V
Switching Speed: Fast
Thermal Resistance (Junction-Case): ~0.16 °C/W
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package Type: Power module
Weight: Approx. 250–300 g
Applications
Inverters and motor drives
Power converters and supplies
Renewable energy systems
Industrial automation and robotics
Backup and UPS systems
Why Choose the CM150DY-24T
Compact design with solid power output
Mitsubishi trench-gate reliability
Optimized thermal performance
Fast and efficient switching
Easy installation and robust mechanical design
Order Now
The Mitsubishi CM150DY-24T IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for efficient power conversion and reliable performance in industrial automation. Browse the complete range of Mitsubishi IGBT Modules.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.