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Mitsubishi CM150E3U-12H
Overview
The Mitsubishi CM150E3U-12H is a single IGBT power module rated for 150 A and 600 V, providing high-speed switching and low conduction losses. Designed with a low-saturation voltage structure and insulated baseplate, this module is perfect for compact, high-efficiency power electronics. Its sturdy chassis mount package ensures long-term reliability in industrial settings.
Key Features
Single IGBT configuration
Collector current: 150 A
Collector-emitter voltage: 600 V
Low VCE(sat) for high efficiency
Integrated free-wheeling diode
Insulated baseplate for optimized heat dissipation
Sturdy chassis mount construction
Compact and reliable for OEM and retrofit systems
Technical Specifications
Part Number: CM150E3U-12H
Configuration: Single IGBT with diode
Collector Current: 150 A
Collector-Emitter Voltage: 600 V
VCE(sat): ~2.0 V at rated current
Gate-Emitter Voltage: ±20 V
Thermal Resistance (Junction-Case): ~0.18 °C/W
Switching Speed: Fast
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package Type: Power module
Weight: Approx. 250–300 g
Applications
General-purpose inverters
Motor drives and robotics
Industrial welding machines
UPS and backup power systems
Automation control systems
Why Choose the CM150E3U-12H
Efficient and compact IGBT for 600 V applications
Mitsubishi’s trusted semiconductor quality
Reliable thermal design with insulated base
Easy to integrate in compact enclosures
Long-lasting performance in industrial conditions
Order Now
The Mitsubishi CM150E3U-12H IGBT module is available and ships worldwide.
This product belongs to our Mitsubishi IGBT Modules collection, created for high-efficiency power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Description
Mitsubishi CM150E3U-12H
Overview
The Mitsubishi CM150E3U-12H is a single IGBT power module rated for 150 A and 600 V, providing high-speed switching and low conduction losses. Designed with a low-saturation voltage structure and insulated baseplate, this module is perfect for compact, high-efficiency power electronics. Its sturdy chassis mount package ensures long-term reliability in industrial settings.
Key Features
Single IGBT configuration
Collector current: 150 A
Collector-emitter voltage: 600 V
Low VCE(sat) for high efficiency
Integrated free-wheeling diode
Insulated baseplate for optimized heat dissipation
Sturdy chassis mount construction
Compact and reliable for OEM and retrofit systems
Technical Specifications
Part Number: CM150E3U-12H
Configuration: Single IGBT with diode
Collector Current: 150 A
Collector-Emitter Voltage: 600 V
VCE(sat): ~2.0 V at rated current
Gate-Emitter Voltage: ±20 V
Thermal Resistance (Junction-Case): ~0.18 °C/W
Switching Speed: Fast
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package Type: Power module
Weight: Approx. 250–300 g
Applications
General-purpose inverters
Motor drives and robotics
Industrial welding machines
UPS and backup power systems
Automation control systems
Why Choose the CM150E3U-12H
Efficient and compact IGBT for 600 V applications
Mitsubishi’s trusted semiconductor quality
Reliable thermal design with insulated base
Easy to integrate in compact enclosures
Long-lasting performance in industrial conditions
Order Now
The Mitsubishi CM150E3U-12H IGBT module is available and ships worldwide.
This product belongs to our Mitsubishi IGBT Modules collection, created for high-efficiency power conversion and reliable performance in industrial automation.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.