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Mitsubishi CM200DY-13T
Overview
The Mitsubishi CM200DY-13T is a high-performance dual IGBT module tailored for industrial power systems. It offers a 200 A collector current and a 600 V voltage rating, featuring trench-gate IGBT technology for reduced conduction losses and efficient switching. The chassis-mount design with an insulated baseplate supports effective thermal management and durability.
Key Features
Dual IGBT half-bridge configuration
Rated current: 200 A
Collector-emitter voltage: 600 V
Trench-gate IGBT design
Integrated fast-recovery free-wheeling diodes
Insulated baseplate for efficient heat transfer
Rugged chassis mount construction
Compact, industry-standard footprint
Technical Specifications
Part Number: CM200DY-13T
Configuration: Dual IGBT with diodes
Collector Current: 200 A
Collector-Emitter Voltage: 600 V
VCE(sat): ~2.0 V at rated current
Gate-Emitter Voltage: ±20 V
Thermal Resistance (Junction-Case): ~0.12 °C/W
Switching Speed: Fast
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package Type: Power module
Weight: Approx. 300–350 g
Applications
Industrial motor drives
Inverter systems and converters
Power supplies and UPS units
Automation and robotic control
Renewable energy systems
Why Choose the CM200DY-13T
Efficient 200 A performance in a compact form
Mitsubishi reliability with trench-gate technology
Easy integration into existing systems
Superior thermal management with isolated base
Trusted for industrial and OEM applications
Order Now
The Mitsubishi CM200DY-13T IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion in industrial automation. Browse the complete range of Mitsubishi IGBT Modules.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Description
Mitsubishi CM200DY-13T
Overview
The Mitsubishi CM200DY-13T is a high-performance dual IGBT module tailored for industrial power systems. It offers a 200 A collector current and a 600 V voltage rating, featuring trench-gate IGBT technology for reduced conduction losses and efficient switching. The chassis-mount design with an insulated baseplate supports effective thermal management and durability.
Key Features
Dual IGBT half-bridge configuration
Rated current: 200 A
Collector-emitter voltage: 600 V
Trench-gate IGBT design
Integrated fast-recovery free-wheeling diodes
Insulated baseplate for efficient heat transfer
Rugged chassis mount construction
Compact, industry-standard footprint
Technical Specifications
Part Number: CM200DY-13T
Configuration: Dual IGBT with diodes
Collector Current: 200 A
Collector-Emitter Voltage: 600 V
VCE(sat): ~2.0 V at rated current
Gate-Emitter Voltage: ±20 V
Thermal Resistance (Junction-Case): ~0.12 °C/W
Switching Speed: Fast
Mounting Type: Chassis mount (isolated base)
Operating Temperature: –40 °C to +150 °C
Package Type: Power module
Weight: Approx. 300–350 g
Applications
Industrial motor drives
Inverter systems and converters
Power supplies and UPS units
Automation and robotic control
Renewable energy systems
Why Choose the CM200DY-13T
Efficient 200 A performance in a compact form
Mitsubishi reliability with trench-gate technology
Easy integration into existing systems
Superior thermal management with isolated base
Trusted for industrial and OEM applications
Order Now
The Mitsubishi CM200DY-13T IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion in industrial automation. Browse the complete range of Mitsubishi IGBT Modules.
Explore the Power Electronics Components main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.