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Mitsubishi CM600DX-13T
Overview
The Mitsubishi CM600DX-13T is a dual IGBT power module crafted for ultra-high current tasks, rated at 600 A and 650 V. Built with trench-gate technology and featuring integrated fast-recovery diodes, this insulated-base module provides efficient switching performance, low thermal resistance, and dependable reliability for challenging power electronics systems.
Key Features
-
Dual IGBT module configuration
-
600 A continuous collector current
-
650 V collector-emitter voltage
-
Trench-gate structure for improved efficiency
-
Integrated fast-recovery diodes
-
Isolated base for simplified thermal design
-
Designed for high-current power electronics
-
Strong mechanical design for harsh environments
Technical Specifications
-
Part Number: CM600DX-13T
-
Configuration: Dual IGBT half-bridge
-
Collector Current (Ic): 600 A
-
Collector-Emitter Voltage (Vces): 650 V
-
VCE(sat): ~2.0 V at rated current
-
Gate-Emitter Voltage (Vge): ±20 V
-
Switching Characteristics: Fast rise and fall times
-
Thermal Resistance (Junction-Case): ~0.035 °C/W
-
Mounting Type: Chassis mount with isolated base
-
Operating Temperature: –40 °C to +150 °C
-
Package Type: Industrial IGBT module
-
Weight: Approx. 450–500 g
Applications
-
Industrial power converters
-
Traction and transportation systems
-
High-capacity motor drives
-
Power supplies for welding equipment
-
Renewable energy and grid-connected inverters
Why Choose the CM600DX-13T
-
Extremely high current capacity (600 A)
-
Low conduction and switching losses
-
Trusted Mitsubishi trench-gate IGBT technology
-
Industrial-grade reliability and thermal performance
-
Ideal for large-scale power applications
Order Now
The Mitsubishi CM600DX-13T IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation.
Explore the main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Description
Mitsubishi CM600DX-13T
Overview
The Mitsubishi CM600DX-13T is a dual IGBT power module crafted for ultra-high current tasks, rated at 600 A and 650 V. Built with trench-gate technology and featuring integrated fast-recovery diodes, this insulated-base module provides efficient switching performance, low thermal resistance, and dependable reliability for challenging power electronics systems.
Key Features
-
Dual IGBT module configuration
-
600 A continuous collector current
-
650 V collector-emitter voltage
-
Trench-gate structure for improved efficiency
-
Integrated fast-recovery diodes
-
Isolated base for simplified thermal design
-
Designed for high-current power electronics
-
Strong mechanical design for harsh environments
Technical Specifications
-
Part Number: CM600DX-13T
-
Configuration: Dual IGBT half-bridge
-
Collector Current (Ic): 600 A
-
Collector-Emitter Voltage (Vces): 650 V
-
VCE(sat): ~2.0 V at rated current
-
Gate-Emitter Voltage (Vge): ±20 V
-
Switching Characteristics: Fast rise and fall times
-
Thermal Resistance (Junction-Case): ~0.035 °C/W
-
Mounting Type: Chassis mount with isolated base
-
Operating Temperature: –40 °C to +150 °C
-
Package Type: Industrial IGBT module
-
Weight: Approx. 450–500 g
Applications
-
Industrial power converters
-
Traction and transportation systems
-
High-capacity motor drives
-
Power supplies for welding equipment
-
Renewable energy and grid-connected inverters
Why Choose the CM600DX-13T
-
Extremely high current capacity (600 A)
-
Low conduction and switching losses
-
Trusted Mitsubishi trench-gate IGBT technology
-
Industrial-grade reliability and thermal performance
-
Ideal for large-scale power applications
Order Now
The Mitsubishi CM600DX-13T IGBT module is available and ships worldwide.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation.
Explore the main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.