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Mitsubishi CM900DU-24NF
Overview
The Mitsubishi CM900DU-24NF is a high-power IGBT module with dual transistor setup, made for heavy-duty industrial applications. With 900 A current and 1200 V capacity, this module uses trench-gate technology and built-in fast recovery diodes to provide efficient switching, low power loss, and excellent thermal performance.
Key Features
Dual IGBT half-bridge module
Collector current: 900 A
Collector-emitter voltage: 1200 V
Trench-gate IGBT structure
Integrated fast-recovery diodes
Insulated baseplate for improved thermal transfer
Rugged chassis mount package
Designed for high-current industrial usage
Technical Specifications
Part Number: CM900DU-24NF
Configuration: Dual IGBT
Collector Current: 900 A (continuous)
Collector-Emitter Voltage: 1200 V
VCE(sat): ~2.0–2.2 V @ rated current
Gate-Emitter Voltage: ±20 V
Switching Speed: Fast
Thermal Resistance (Junction-Case): ~0.025 °C/W
Mounting Type: Chassis mount (insulated)
Operating Temperature: –40 °C to +150 °C
Package Type: High-power IGBT module
Weight: Approx. 800–900 g
Applications
High-capacity inverters and drives
Industrial automation and robotics
Traction and railway systems
Wind and solar power converters
Large-scale UPS and energy systems
Why Choose the CM900DU-24NF
Massive 900 A current rating with 1200 V blocking voltage
Excellent efficiency and thermal performance
Mitsubishi quality and long-term reliability
Suitable for the most demanding power applications
Simplified mounting with insulated baseplate
Order Now
The Mitsubishi CM900DU-24NF IGBT module is available and ready for worldwide shipping.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation.
Explore the main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.
Description
Mitsubishi CM900DU-24NF
Overview
The Mitsubishi CM900DU-24NF is a high-power IGBT module with dual transistor setup, made for heavy-duty industrial applications. With 900 A current and 1200 V capacity, this module uses trench-gate technology and built-in fast recovery diodes to provide efficient switching, low power loss, and excellent thermal performance.
Key Features
Dual IGBT half-bridge module
Collector current: 900 A
Collector-emitter voltage: 1200 V
Trench-gate IGBT structure
Integrated fast-recovery diodes
Insulated baseplate for improved thermal transfer
Rugged chassis mount package
Designed for high-current industrial usage
Technical Specifications
Part Number: CM900DU-24NF
Configuration: Dual IGBT
Collector Current: 900 A (continuous)
Collector-Emitter Voltage: 1200 V
VCE(sat): ~2.0–2.2 V @ rated current
Gate-Emitter Voltage: ±20 V
Switching Speed: Fast
Thermal Resistance (Junction-Case): ~0.025 °C/W
Mounting Type: Chassis mount (insulated)
Operating Temperature: –40 °C to +150 °C
Package Type: High-power IGBT module
Weight: Approx. 800–900 g
Applications
High-capacity inverters and drives
Industrial automation and robotics
Traction and railway systems
Wind and solar power converters
Large-scale UPS and energy systems
Why Choose the CM900DU-24NF
Massive 900 A current rating with 1200 V blocking voltage
Excellent efficiency and thermal performance
Mitsubishi quality and long-term reliability
Suitable for the most demanding power applications
Simplified mounting with insulated baseplate
Order Now
The Mitsubishi CM900DU-24NF IGBT module is available and ready for worldwide shipping.
This product is part of our Mitsubishi IGBT Modules collection, designed for high-efficiency power conversion and reliable performance in industrial automation.
Explore the main category to discover diodes, thyristors, GTOs, MOSFETs, and other semiconductor solutions.